(2012). Characterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone / Andrew A. Woodworth [and four others].
Cita Chicago Style (17a ed.)Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-laser Heated Floating Zone / Andrew A. Woodworth [and Four Others]. 2012.
Cita MLA (9a ed.)Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-laser Heated Floating Zone / Andrew A. Woodworth [and Four Others]. 2012.
Precaución: Estas citas no son 100% exactas.